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BASIC ELECTRONICS
2nd Sem Exam/ECE/CSE/IT/EEE/Dec 2017

 Basic Electronics Diploma Solved Paper Dec 2017                                           

                              SECTION-A

Q1. Fill in the Blanks                                                                                                                      15×1=15

  1. The input impedance of a FET is Larger than that of BJT.
  2. ICEO =(1 + ß) ICBO
  3. The process of adding impurities is called Doping
  4. The turn on voltage in a silicon diode is 0.7 V
  5. A zener diode is always operated in Zener Breakdown Region.
  6. Holes are Minority carriers in N-type Semiconductor.
  7. When the gate terminal of MOSFET is positive it is said to operate in E-Mode.
  8. The unit of hie is  Ohm.
  9. In a transistor there are Two PN Junctions.
  10. The point of intersection of dc and ac load line is called Q-Point or Operating Point

              SECTION-B

Q2. Attempt any five questions.                                                                    5×6=30

  1. What is ripple factor? How it can be minimized?
  2. Explain zener diode as a voltage Regulator ?
  3. Explain intrinsic and extrinsic Semiconductor ?
  4. Give construction and working of MOSFET ?
  5. Explain the working of half wave Rectifier ?
  6. Draw the circuit diagram of CE amplifier. Explain Briefly ?
  7. What do you mean by h parameters of a transistor? Explain briefly

                  SECTION-C

Q3. Attempt any three questions.                                                       3×10=30

  1. Explain construction of NPN transistor. Explain how it can be used as
  2. Discuss energy band structure for insulators, semiconductors and
  3. Write a short note on (any two)
    1. Filter circuits
    2. AC and DC load line
    3. Avalanche breakdown
    4. What are various transistor biasing circuits? Compare their advantages and Diadvantages ?
    5. With the help of a diagram, explain the working of a Bridge Type Full wave Rectifier ?

BASIC ELectronics be DEC 2017 DIPLOMA PAPER SOLUTION


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Section a FILL IN THE BLANKS bASIC ELECTRONICS DEC 2017 DIPLOMA paper

The input impedance of a FET is ______ than that of BJT.

The input impedance of a FET is Larger than that of BJT.

ICEO =(______) ICBO

ICEO =(1 + ß) ICBO

 

The process of adding impurities is called ______

The process of adding impurities is called Doping

 

The turn on voltage in a silicon diode is

The turn on voltage in a silicon diode is 0.7 V

 

A zener diode is always operated in ___________.

A zener diode is always operated in Zener Breakdown Region.

Holes are ________ carriers in N-type Semiconductor.

Holes are Minority carriers in N-type Semiconductor.

When the gate terminal of MOSFET is positive it is said to operate in ________

When the gate terminal of MOSFET is positive it is said to operate in E-Mode.

The unit of hie is _______

The unit of hie is  Ohm.

In a transistor there are ____ PN Junctions

In a transistor there are Two PN Junctions.

The point of intersection of dc and ac load line is called __________.

The point of intersection of dc and ac load line is called Q-Point or Operating Point

The value of resistance of pn junction, when it is forward biased is ____

Low

FET is a _____ terminal semiconductor

Three

Basic Electronics PSBTE Diploma Solved Paper Dec 2017 .Download Previous Year Basic Electronics 2nd Sem Semester ECE ,CSE Question Paper Solution Click Here

Section B : Basic electronics be PAPER dec 2017 PAPER

What is Ripple factor ? How it can be minimized ?

 Ripple factor? How it can be minimized.

Explain zener diode as a voltage Regulator ?

Zener diode as a voltage Regulator

Explain intrinsic and extrinsic Semiconductor ?

Intrinsic and Extrinsic Semiconductor ?

Give construction and working of MOSFET ?

Construction and working of MOSFET 

Explain the working of half wave Rectifier ?

Working of half wave Rectifier 

Draw the circuit diagram of CE amplifier. Explain Briefly ?

Circuit diagram of CE amplifier.

What do you mean by h parameters of a transistor ?

h parameters of a transistor

Basic Electronics PSBTE Diploma Solved Paper May 2019 Solution Click Here

BASIC ELECTRONICS DIPLOMA MAY 2019 SUBJECT CODE 0664 PAPER


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https://www.youtube.com/watch?v=UHX6f8TIvX8https://www.youtube.com/watch?v=M_RR6LVICp0https://www.youtube.com/watch?v=mV41CMWonN4https://www.youtube.com/watch?v=s0LVPE0Q3LE&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=14&t=0s

Section c solved bASIC ELECTRONICS BE DIPLOMA paper DEC 2017

Explain construction of NPN transistor ?

Explain construction of NPN transistor

Discuss energy band structure for insulators, semiconductors and Conductors.

Energy band structure for insulators, semiconductors and Conductors.

 

Differentiate between conductors, insulators and semiconductors on the basis of energy levels diagrams?

Write a short note on (any two)

    1. Filter circuits
    2. AC and DC load line
    3. Avalanche breakdown

What are various transistor biasing circuits? Compare their advantages and Disadvantages ?

Various transistor biasing circuits

Compare their advantages and Disadvantages 

 

With the help of a diagram, explain the working of a Bridge Type Full wave Rectifier ?

Explain the working of a Bridge Type Full wave Rectifier 

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