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# Electronics-1 May 2017 3rd Sem Electrical Engineering Diploma Paper

## Electronics-1 May 2017 3RD Sem Electrical Engineer ing Diploma Paper

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### Section a Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper

An ideal current source has Infinity internal resistance.

JFET stand for  Junction Field Effect Transistor .

LED stand for Light Emiting Diode .

The emitter of a transistor is Highly doped.

Photo diode is optimized for its sensitivity to _____________ .

Zener diode is used as voltage regulator.

In a bipolar transistor there are Two PN junctions.

A semi conductor has Negative coefficient of resistance.

The best biasing is achieved by Potential or Volatge Divider biasing circuit.

The point of intersection of dc and ac load line is called Q-point Operating Point .

The ideal value of stability factor is Zero .

In the saturation region of a transistor both the junctions are Forward Biased .

IMPATT diode has negative resistance.

A bridge rectifier is not suitable for ___________ voltage rectification.

The process of adding the impurity to an intrinsic semi conductor is called Doping .

### Section B :Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper

Avalanche breakdown.

Why a transistor should be biased.

Varactor diode and its applications.

Need of multistage amplifier.

Intrinsic and extrinsic semiconductor.

Distinguished between FET and BJT.

Constant voltage source.

Silicon is preferred over germanium.

## Electronics-1 May 2017 3RD Sem Electrical Engineer ing Diploma Paper

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### Section c :-Electronics-1 May 2019 3RD Sem Electrical Engineering Diploma Paper

Behavior of PN junction in forward and reverse biased condition.

Single stage transistor amplifier .

Circuit diagram of a full wave bridge rectifier and its working.

Various coupling used in multistage amplifiers.

Need of coupling network?

Construction, operation and characteristics of MOSFET in depletion mode.

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