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Explain the Differentiate Between FET and BJT ?

Explain the Differentiate between FET and BJT.

S.No

Parameter

                FET

                BJT

1.

Full Form

FET Stands for Field Effect Transistor.

BJT Stands for Bipolar Junction Transistor

2.

Input Impedance

Its input impedance is very high.

Its input impedance is high.

3.

Controlled Device

It is a Current controlled device.

It is a Voltage controlled device.

4.

Types of Device

It is a Uni-polar device. Because Conduction of current in FET is due to only one type of charge carriers i.e. majority carriers

It is a Bi-polar device Because Conduction of current in BJT involves both charge carriers i.e. majority carriers as well as minority carriers.

5.

Transconductance.

Low Transconductance.

High Transconductance.

6.

Voltage Gain

Low voltage gain.

High voltage gain.

7.

Noise

Noise is Lower as compared to BJT.

Noise is higher as compared to FET. Because charge carriers have to cross two PN junctions.

8.

Thermal Stability

Higher thermal stability.

Low thermal stability.

9.

Transfer characteristics.

Non Linear transfer characteristics.

Linear transfer characteristics.

10.

Size

Smaller size as compared to BJT.

Larger size as compared to FET.

11.

Gain-Bandwidth product.

Small gain-bandwidth product.

Large gain-bandwidth product.

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Section a FILL IN THE BLANKS be paper

FET Stands ______________

 

FET Stands for Field Effect Transistor.

BJT Stands for _______________

BJT Stands for Bipolar Junction Transistor.

JFET Stands for _____________

Junction Field Effect Transistor.

CMOS stands for __________________

Complementary Metal Oxide Semiconductor.

Transistor is a _______ terminal semiconductor.

Three

Zener diode is made to operate in _____ Region

Zener Breakdown Region

A transistor contains______PN Junction

Two

Zener diode is made to operate in _______

Zener Breakdown.

MOSFET stands for _____________

Metal Oxide Semiconductor

The process by which an impurity is added to semiconductor is called _____

Doping. 

The value of resistance of pn junction, when it is forward biased is ____

Low

FET is a _____ terminal semiconductor

Three

Basic Electronics PSBTE Diploma Solved Paper May 2019 .Download Previous Year Basic Electronics 2nd Sem Semester ECE ,CSE Question Paper Solution Click Here

Section B : BE PAPER MAY 2019 PAPER

What do you mean by Zener Breakdown ?
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Working of Half wave Rectifier click here

Explain working of Transistors as an amplifier ?

Working of NPN Transistor Click Here

Explain working of LC Capacitor input filter ?
Explain p- type and n-type semiconductors ?
What is FET ? Explain its working ?

Basic Electronics PSBTE Diploma Solved Paper May 2019 Solution Click Here

BASIC ELECTRONICS DIPLOMA MAY 2019 SUBJECT CODE 0664 PAPER


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